Latsa-Pack IGBT
Latsa-pack IGBT (IEGT)
| TYPE | VDRM V | VRRM V | IT (AV)@80 ℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| Saukewa: CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| Saukewa: CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| Saukewa: CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| Saukewa: CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| Saukewa: CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| Saukewa: CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| Saukewa: CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| Saukewa: CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| Saukewa: CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| Saukewa: CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| Saukewa: CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| Saukewa: CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Lura:D- da diode part, A-ba tare da diode part
A al'ada, an yi amfani da samfuran tuntuɓar IGBT a cikin injin sauyawa na tsarin watsa DC mai sassauƙa.Kunshin tsarin ɓarkewar zafi na gefe guda ɗaya ne.Ƙarfin wutar lantarki na na'urar yana da iyaka kuma bai dace ba don haɗawa a jeri, rashin talauci na rayuwa a cikin iska mai gishiri, rashin ƙarfi na girgizawa ko gajiya mai zafi.
Sabuwar nau'in latsa-lamba mai girma-ikon latsa-pack IGBT na'urar ba kawai ta warware matsalolin guraben aiki a cikin tsarin siyarwa ba, gajiyawar thermal na kayan aikin siyarwa da ƙarancin ƙarancin ƙarancin zafi mai gefe guda amma kuma yana kawar da juriya na thermal tsakanin sassa daban-daban, rage girman da nauyi.Kuma inganta ingantaccen aiki da amincin na'urar IGBT.Yana da kyawawan dacewa don gamsar da babban iko, babban ƙarfin lantarki, babban abin dogaro na tsarin watsawa na DC mai sassauƙa.
Sauya nau'in tuntuɓar siyar ta hanyar latsa-pack IGBT yana da mahimmanci.
Tun daga 2010, Runau Electronics an ƙaddamar da shi don haɓaka sabon nau'in nau'in latsa-pack IGBT na'urar kuma ya sami nasarar samarwa a cikin 2013. An tabbatar da wasan kwaikwayon ta hanyar cancantar ƙasa kuma an kammala nasarar da aka yanke.
Yanzu za mu iya kerawa da kuma samar da jerin latsa-fakitin IGBT na IC kewayon a 600A zuwa 3000A da VCES kewayon a 1700V zuwa 6500V.Ana sa ran kyakkyawan fata na fakitin IGBT da aka yi a kasar Sin da za a yi amfani da shi a cikin tsarin watsa DC mai sassaucin ra'ayi kuma zai zama wani babban dutse mai nisa na duniya na masana'antar wutar lantarki ta kasar Sin bayan jirgin kasa mai sauri mai sauri.
Taƙaitaccen Gabatarwar Yanayin Halittu:
1. Yanayin: Latsa-fakitin IGBT CSG07E1700
●Halayen lantarki bayan marufi da latsawa
● Juya bayaa layi dayahadesauri maida diodekammala
● Siga:
Ƙimar darajar (25 ℃)
a.Voltage mai tarawa: VGES=1700 (V)
b.Ƙofar Emitter Voltage: VCES=± 20 (V)
c.Mai tarawa Yanzu: IC = 800 (A) ICP = 1600 (A)
d.Rashin Wutar Lantarki: PC=4440 (W)
e.Yanayin Junction Aiki: Tj= ~ 20 ~ 125 ℃
f.Adana zafin jiki: Tstg= ~ 40 ~ 125 ℃
An lura: na'urar za ta lalace idan ta wuce ƙimar ƙima
LantarkiCharacteristics, TC 125 ℃, Rth (thermal juriya najunction zuwaharka)ba a hada
a.Ƙofar Ƙofar Yanzu: IGES=±5（μA）
b.Mai Tarawa Emitter Toshewa na yanzu ICES=250（mA）
c.Mai tara Emitter Saturation Voltage: VCE(zauna)=6(V)
d.Ƙofar Emitter Ƙarfin Wutar Lantarki: VGE(th)=10(V)
e.Kunna lokaci: Ton = 2.5μs
f.Kashe lokaci: Toff=3μs
2. Yanayin: Latsa-fakitin IGBT CSG10F2500
●Halayen lantarki bayan marufi da latsawa
● Juya bayaa layi dayahadesauri maida diodekammala
● Siga:
Ƙimar darajar (25 ℃)
a.Voltage mai tarawa: VGES=2500 (V)
b.Ƙofar Emitter Voltage: VCES=± 20 (V)
c.Mai tarawa Yanzu: IC = 600 (A) ICP = 2000 (A)
d.Rashin wutar lantarki: PC=4800 (W)
e.Yanayin Junction Aiki: Tj= ~ 40 ~ 125 ℃
f.Adana zafin jiki: Tstg= ~ 40 ~ 125 ℃
An lura: na'urar za ta lalace idan ta wuce ƙimar ƙima
LantarkiCharacteristics, TC 125 ℃, Rth (thermal juriya najunction zuwaharka)ba a hada
a.Leakage Ƙofar Yanzu: IGES=±15（μA）
b.Toshe Mai Tara Emitter na yanzu ICES=25 (mA)
c.Mai tara Emitter Saturation Voltage: VCE(zauna)=3.2 (V)
d.Ƙofar Emitter Ƙarfin Wuta: VGE(th)=6.3(V)
e.Kunna lokaci: Ton = 3.2μs
f.Kashe lokaci: Toff=9.8μs
g.Diode Forward ƙarfin lantarki: VF=3.2V
h.Lokacin Maida Diode: Trr=1.0 μs
3. Yanayin: Latsa-fakitin IGBT CSG10F4500
●Halayen lantarki bayan marufi da latsawa
● Juya bayaa layi dayahadesauri maida diodekammala
● Siga:
Ƙimar darajar (25 ℃)
a.Voltage mai tarawa Emitter: VGES=4500 (V)
b.Ƙofar Emitter Voltage: VCES=± 20 (V)
c.Mai tarawa Yanzu: IC = 600 (A) ICP = 2000 (A)
d.Rashin Wutar Lantarki: PC=7700 (W)
e.Yanayin Junction Aiki: Tj= ~ 40 ~ 125 ℃
f.Adana zafin jiki: Tstg= ~ 40 ~ 125 ℃
An lura: na'urar za ta lalace idan ta wuce ƙimar ƙima
LantarkiCharacteristics, TC 125 ℃, Rth (thermal juriya najunction zuwaharka)ba a hada
a.Leakage Ƙofar Yanzu: IGES=±15（μA）
b.Toshe Mai Tara Emitter na yanzu ICES=50 (mA)
c.Mai tara Emitter Saturation Voltage: VCE(zauna)=3.9 (V)
d.Ƙofar Emitter Ƙarfin Wuta: VGE(th)=5.2 (V)
e.Kunna lokaci: Ton = 5.5μs
f.Kashe lokaci: Toff=5.5μs
g.Diode Forward ƙarfin lantarki: VF=3.8V
h.Lokacin Maida Diode: Trr=2.0 μs
Lura:Latsa-fakitin IGBT yana da fa'ida a cikin dogaro mai tsayi na injiniya na dogon lokaci, babban juriya ga lalacewa da halaye na tsarin haɗin latsa, ya dace don aiki a cikin jerin na'urori, kuma idan aka kwatanta da GTO thyristor na gargajiya, IGBT shine hanyar tuƙi mai ƙarfi. .Saboda haka, yana da sauƙi don aiki, aminci da faɗin kewayon aiki.